IRF7604 Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=-20V, Rds(on)=0.09ohm)

IRF7604
1200
1000
V _GS = 0V,
f = 1MHz
C _iss = C_gs + C _gd , C_ds S HO RTE D
C _rss = C _gd
C _oss = C _ds + C _gd
C _{is s}
800
C _oss
600
400
C _rss
200
0
A
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
10
T_J = 150°C
1
T_J = 25°C
0.1
0.4
VGS = 0V _A
0.6
0.8
1.0
1.2
-V_SD , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
10
I _D = -2.4A
V_DS = -16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
0
4
8
12
16
20
Q _G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
10
100µs
1ms
1
10ms
T_A = 25°C
T_J = 150°C
S ingle P ulse
0.1
0.1
1
A
10
100
-V _DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area