IRF7604 Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=-20V, Rds(on)=0.09ohm)

IRF7604
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage
-20 ––– ––– V V_GS = 0V, I_D = -250µA
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient ––– -0.022 ––– V/°C Reference to 25°C, I_D = -1mA
R_DS(ON)
Static Drain-to-Source On-Resistance
––– ––– 0.090
––– ––– 0.13 ^Ω
V_GS = -4.5V, I_D = -2.4A ƒ
V_GS = -2.7V, I_D = -1.2A ƒ
V_GS(th)
Gate Threshold Voltage
-0.70 ––– ––– V V_DS = V_GS, I_D = -250µA
g_fs
Forward Transconductance
2.6 ––– ––– S V_DS = -10V, I_D = -1.2A
I_DSS
Drain-to-Source Leakage Current
––– ––– -1.0
––– ––– -25
µA ^{VDS = -16V, VGS = 0V}
V_DS = -16V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 _nA V_GS = -12V
––– ––– 100
V_GS = 12V
Q_g
Total Gate Charge
––– 13 20
I_D = -2.4A
Q_gs
Gate-to-Source Charge
––– 2.6 3.9 nC V_DS = -16V
Q_gd
Gate-to-Drain ("Miller") Charge
––– 5.6 9.0
V_GS = -4.5V, See Fig. 6 and 9 ƒ
t_d(on)
Turn-On Delay Time
––– 17 –––
V_DD = -10V
t_r
t_d(off)
Rise Time
Turn-Off Delay Time
––– 53 –––
––– 31 –––
ns
I_D = -2.4A
R_G = 6.0Ω
t_f
Fall Time
––– 38 –––
R_D = 4.0Ω, See Fig. 10 ƒ
C_iss
Input Capacitance
––– 590 –––
V_GS = 0V
C_oss
Output Capacitance
––– 330 ––– pF V_DS = -15V
C_rss
Reverse Transfer Capacitance
––– 170 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
––– ––– -1.8
––– ––– -19
MOSFET symbol
A ^{showing the}
integral reverse
p-n junction diode.
D
G
S
––– ––– -1.2 V T_J = 25°C, I_S = -2.4A, V_GS = 0V ƒ
––– 41 62 ns T_J = 25°C, I_F = -2.4A
––– 38 57 nC di/dt = 100A/µs ƒ
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ I_SD ≤ -2.4A, di/dt ≤ -96A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
„ Surface mounted on FR-4 board, t ≤ 10sec.