IRF7506 Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=-30V, Rds(on)=0.27ohm)

IRF7506
400
V _GS = 0V ,
f = 1MH z
C _{is s} = C_gs + C _{g d} , C_ds SH OR TED
C _rss = C_{g d}
C _oss = C_ds + C _gd
300
C iss
C oss
200
100
C rs s
0
A
1
10
100
-V_{D S} , Drain-to-Source V oltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I _D = -1.2A
16
12
V_DS = -24V
V_DS = -15V
8
4
FOR TEST CIRCUIT
SEE F IGURE 9
0
A
0
2
4
6
8
10
12
Q _G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
T_J = 1 50 °C
1
T_J = 25 °C
0.1
0.4
VGS = 0V _A
0.6
0.8
1.0
1.2
1.4
-V_SD , S ource-to-Drain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
10
10µ s
10 0µs
1
1 ms
T_A = 25°C
T_J = 150°C
S ing le Pulse
0.1
10m s
1
10
-V_DS , Drain-to-Source Voltage (V)
A
100
Fig 8. Maximum Safe Operating Area