IRF7506 Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=-30V, Rds(on)=0.27ohm)

IRF7506
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-30 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.039 ––– V/°C Reference to 25°C, ID = -1mA
R_DS(on)
Static Drain-to-Source On-Resistance
––– ––– 0.27
––– ––– 0.45
Ω
VGS = -10V, ID = -1.2A ƒ
VGS = -4.5V, ID = -0.60A ƒ
VGS(th)
Gate Threshold Voltage
-1.0 ––– ––– V VDS = VGS, ID = -250µA
gfs
Forward Transconductance
0.92 ––– ––– S VDS = -10V, ID = -0.60A
I_DSS
Drain-to-Source Leakage Current
––– ––– -1.0
––– ––– -25
µA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 _nA VGS = -20V
––– ––– 100
VGS = 20V
Qg
Total Gate Charge
––– 7.5 11
ID = -1.2A
Qgs
Gate-to-Source Charge
––– 1.3 1.9 nC VDS = -24V
Qgd
Gate-to-Drain ("Miller") Charge
––– 2.5 3.7
VGS = -10V, See Fig. 6 and 9 ƒ
td(on)
Turn-On Delay Time
––– 9.7 –––
VDD = -15V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 12 ––– _ns ID = -1.2A
––– 19 –––
RG = 6.2Ω
tf
Fall Time
––– 9.3 –––
RD = 12Ω, See Fig. 10 ƒ
Ciss
Input Capacitance
––– 180 –––
VGS = 0V
Coss
Output Capacitance
––– 87 ––– pF VDS = -25V
C_rss
Reverse Transfer Capacitance
––– 42 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
––– -1.25
A
––– ^-9.6
––– -1.2 V
30 45 ns
37 55 nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
T_J = 25°C, I_S = -1.2A, V_GS = 0V ƒ
TJ = 25°C, IF = -1.2A
di/dt = -100A/µs ƒ
Notes:
 Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
‚ I_SD ≤ -1.2A, di/dt ≤ -140A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C
ƒ Pulse width ≤ 300µs – duty cycle ≤ 2%
„ Surface mounted on FR-4 board, t ≤ 10sec.