IRF7495TRPBF Datasheet, PDF (4/8 Pages) International Rectifier – Low Gate to Drain Charge to Reduce Switching Losses

IRF7494PbF
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = C _gd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
14.0
ID= 3.1A
12.0
VDS= 120V
10.0
VDS= 75V
VDS= 30V
8.0
6.0
4.0
2.0
0.0
0
5 10 15 20 25 30 35 40 45
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100
TJ = 150°C
10
1
TJ = 25°C
VGS = 0V
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10
100µsec
1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
1msec
10msec
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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