IRF7491PBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF7491PbF
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Crss ^Coss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12.0
ID= 5.8A
10.0
8.0
VDS= 64V
VDS= 40V
VDS= 16V
6.0
4.0
2.0
0.0
0
10 20 30 40 50 60
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100.00
10.00
TJ = 150°C
1.00
TJ = 25°C
0.10
0.0
VGS = 0V
0.2 0.4 0.6 0.8 1.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10
100µsec
1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10
1msec
10msec
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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