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IRF7491PBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF7491PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
80 âââ âââ V VGS = 0V, ID = 250µA
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ 0.08 âââ V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance âââ 14
f 16 m⦠VGS = 10V, ID = 5.8A
VGS(th)
Gate Threshold Voltage
3.5 âââ 5.5 V VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
âââ âââ 1.0 µA VDS = 64V, VGS = 0V
âââ âââ 250
VDS = 64V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
9.6 âââ âââ
âââ 51 76
âââ 18 âââ
âââ 18 âââ
âââ 22 âââ
âââ 19 âââ
âââ 32 âââ
âââ 10 âââ
âââ 2940 âââ
âââ 290 âââ
âââ 160 âââ
âââ 980 âââ
âââ 210 âââ
âââ 310 âââ
S VDS = 25V, ID = 5.8A
ID = 5.8A
nC VDS = 40V
f VGS = 10V
VDD = 40V
ID = 5.8A
ns RG = 6.2â¦
f VGS = 10V
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 64V, Æ = 1.0MHz
e VGS = 0V, VDS = 0V to 64V
Avalanche Characteristics
EAS
IAR
dh Parameter
Single Pulse Avalanche Energy
ÃÂ Avalanche Current
Typ.
âââ
âââ
Max.
130
5.8
Units
mJ
A
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂh (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ 9.7
MOSFET symbol
D
A showing the
âââ âââ 77
integral reverse
G
âââ âââ 1.3
âââ 47 âââ
âââ 110 âââ
p-n junction diode.
S
f V TJ = 25°C, IS = 5.8A, VGS = 0V
f ns TJ = 25°C, IF = 5.8A, VDD = 25V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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