IRF7470 Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=40V, Rds(on)max=13mohm, Id=10A)

IRF7470
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
100
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
ID = 8.0A
8
V_DS = 32V
V_DS = 20V
6
4
2
0
0
10
20
30
40
50
60
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T_J = 150° C
10
T_J = 25 ° C
1
0.1
0.2
V _GS = 0 V
0.6
1.0
1.4
1.8
2.2
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
100us
10
1ms
T_A = 25 °C
T_J = 150 ° C
Single Pulse
1
0.1
1
10ms
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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