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IRF7470 Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=40V, Rds(on)max=13mohm, Id=10A) | |||
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IRF7470
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
40
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ
âââ
RDS(on)
Static Drain-to-Source On-Resistance âââ
âââ
VGS(th)
Gate Threshold Voltage
0.8
âââ
IDSS
Drain-to-Source Leakage Current
âââ
Gate-to-Source Forward Leakage
âââ
IGSS
Gate-to-Source Reverse Leakage
âââ
âââ âââ V
0.04 âââ V/°C
9.0 13
10 15 mâ¦
14.5 30
âââ 2.0 V
âââ 20 µA
âââ 100
âââ 200
nA
âââ -200
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 10A Â
VGS = 4.5V, ID = 8.0A Â
VGS = 2.8V, ID = 5.0A Â
VDS = VGS, ID = 250µA
VDS = 32V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 125C
VGS = 12V
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
27 âââ âââ
âââ 29 44
âââ 7.9 12
âââ 8.0 12
âââ 23 35
âââ 10 âââ
âââ 1.9 âââ
âââ 21 âââ
âââ 3.2 âââ
âââ 3430 âââ
âââ 690 âââ
âââ 41 âââ
S VDS = 20V, ID = 8.0A
ID = 8.0A
nC VDS = 20V
VGS = 4.5V Â
VGS = 0V, VDS = 16V
VDD = 20V
ns ID = 8.0A
RG = 1.8â¦
VGS = 4.5V Â
VGS = 0V
VDS = 20V
pF Æ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche EnergyÂ
Avalanche CurrentÂ
Typ.
âââ
âââ
Max.
300
8.0
Units
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Min.
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ. Max.
âââ 2.3
âââ 85
0.80 1.3
0.65 âââ
72 110
130 200
76 110
150 230
Units
A
V
ns
nC
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 8.0A, VGS = 0V Â
TJ = 125°C, IS = 8.0A, VGS = 0V
TJ = 25°C, IF = 8.0A, VR= 20V
di/dt = 100A/µs Â
TJ = 125°C, IF = 8.0A, VR=20V
di/dt = 100A/µs Â
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