IRF7424PBF Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET Power MOSFET

IRF7424PbF
6000
5000
4000
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
3000
2000
1000
C_oss
C_rss
0
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12
ID = -11A
10
V_DS =-24V
V_DS =-15V
8
6
4
2
0
0
20
40
60
80
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T_J = 150° C
10
1
T_J = 25° C
0.1
0.4
V_GS = 0 V
0.6
0.8
1.0
1.2
-V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100us
10
1ms
T_A = 25°C
T_J = 150°C
Single Pulse
1
0.1
1
10ms
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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