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IRF7424PBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRF7424PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
-30 âââ âââ
âââ 0.019 âââ
âââ âââ 13.5
âââ âââ 22
-1.0 âââ -2.5
17 âââ âââ
âââ âââ -15
âââ âââ -25
âââ âââ -100
âââ âââ 100
âââ 75 110
âââ 14 21
âââ 12 18
âââ 15 âââ
âââ 23 âââ
âââ 150 âââ
âââ 76 âââ
âââ 4030 âââ
âââ 580 âââ
âââ 410 âââ
Units
V
V/°C
mâ¦
V
S
µA
nA
nC
ns
pF
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -11A Â
VGS = -4.5V, ID = -8.8A Â
VDS = VGS, ID = -250µA
VDS = -10V, ID = -11A
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 70°C
VGS = -20V
VGS = 20V
ID = -11A
VDS = -15V
VGS = -10V
VDD = -15V Â
ID = -1.0A
RG = 6.0â¦
VGS = -10V
VGS = 0V
VDS = -25V
Æ = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
ÂÂÂ ÂÂÂ -2.5
showing the
A
integral reverse
G
ÂÂÂ ÂÂÂ -47
p-n junction diode.
S
âââ âââ -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V Â
âââ 40 60 ns TJ = 25°C, IF = -2.5A
âââ 47 71 nC di/dt = -100A/µs Â
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Pulse width ⤠400µs; duty cycle ⤠2%.
 Surface mounted on 1 in square Cu board
2
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