IRF7404 Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF7404
3000
2000
V _GS = 0V,
f = 1MHz
C _iss = C _gs + C _gd , C_ds S H O R TE D
C _rss = C _gd
C _oss = C _ds + C _gd
C iss
C oss
1000
Crss
0
A
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
I _D = -3.2A
V_DS = -16V
8
6
4
2
FOR TEST CIR CU IT
SEE FIGURE 12
0
A
0
10
20
30
40
50
60
Q _G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T_J = 1 5 0°C
10
T_J = 25°C
1
0.1
0.2
VGS = 0V
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-V _SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10
1ms
10ms
T_A = 25 °C
T_J = 150 °C
Single Pulse
1
0.1
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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