IRF7404 Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF7404
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(ON)
Static Drain-to-Source On-Resistance
V_GS(th)
g_fs
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-20 ––– –––
––– -0.012 –––
––– ––– 0.040
––– ––– 0.060
V
V/°C
Ω
V_GS = 0V, ID = -250µA
Reference to 25°C, I_D = -1mA
V_GS = -4.5V, I_D = -3.2A ƒ
V_GS = -2.7V, I_D = -2.7A ƒ
-0.70 ––– ––– V V_DS = V_GS, I_D = -250µA
6.8 ––– ––– S V_DS = -15V, I_D = -3.2A
––– ––– -1.0 _µA V_DS = -16V, V_GS = 0V
––– ––– -25
V_DS = -16V, V_GS = 0V, T_J = 125°C
––– ––– -100 _nA V_GS = -12V
––– ––– 100
V_GS = 12V
––– ––– 50
I_D = -3.2A
––– ––– 5.5 nC V_DS = -16V
––– ––– 21
V_GS = -4.5V, See Fig. 6 and 12 ƒ
––– 14 –––
V_DD = -10V
––– 32 ––– _ns I_D = -3.2A
––– 100 –––
R_G = 6.0Ω
––– 65 –––
R_D = 3.1Ω, See Fig. 10 ƒ
D
––– 2.5 –––
nH ^{Between lead tip}
and center of die contact ^G
––– 4.0 –––
S
––– 1500 –––
V_GS = 0V
––– 730 ––– pF V_DS = -15V
––– 340 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– -3.1
––– ––– -27
––– ––– -1.0
––– 69 100
––– 71 110
MOSFET symbol
D
showing the
A
integral reverse
G
p-n junction diode.
S
V T_J = 25°C, I_S = -2.0A, V_GS = 0V ƒ
ns T_J = 25°C, I_F = -3.2A
µC di/dt = 100A/µs ƒ
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ I_SD ≤ -3.2A, di/dt ≤ -65A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
2
„ Surface mounted on FR-4 board, t ≤ 10sec.
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