IRF7379QPBF Datasheet, PDF (4/10 Pages) International Rectifier – HEXFET Power MOSFET

IRF7379QPbF
N-Channel
2.0 _{ID = 4.0A}
1.5
1.0
0.5
0.0
-60
V_GS = 10V
A
-40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature (°C)
Fig 5. Normalized On-Resistance
Vs. Temperature
0.20
0.16
0.12
VGS = 4.5V
0.08
VGS = 10V
0.04
0.00
2
4
6
8
10
I _D , Drain Current (A)
Fig 6. Typical On-Resistance Vs. Drain
Current
0.08
0.07
0.06
0.05
ID = 5.8A
0.04
0.03
0
4
8
12
16
V_GS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
4
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