IRF7379QPBF Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET Power MOSFET

l Advanced Process Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Automotive [Q101] Qualified
l Lead-Free
PD - 96111
IRF7379QPbF
HEXFET^® Power MOSFET
N-CHANNEL MOSFET
S1
1
8
D1
N-Ch P-Ch
G1
2
S2
3
7
D1
V_DSS 30V -30V
6
D2
G2
4
5
D2
P-CHANNEL MOSFET
R_DS(on) 0.045Ω 0.090Ω
Top View
Description
Specifically designed for Automotive applications, these
HEXFET^® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
Absolute Maximum Ratings
V_SD
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
V_GS
dv/dt
T_J, T_STG
Parameter
Drain-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
SO-8
Max.
N-Channel
P-Channel
30
-30
5.8
-4.3
4.6
-3.4
46
-34
2.5
0.02
± 20
5.0
-5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
R_θJA
www.irf.com
Parameter
Maximum Junction-to-Ambient„
Max.
50
Units
°C/W
1
07/23/07