IRF7342TRPBF Datasheet, PDF (4/7 Pages) International Rectifier – Generation V Technology

IRF7342PbF
2.0 _{ID = -3.4 A}
1.5
1.0
0.240
0.200
0.160
VGS = -4.5V
0.5
V_GS = -10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig 5. Normalized On-Resistance
Vs. Temperature
0.120
VGS = -10V
0.080
0
2
4
6
8
10
12
-I_D , Drain Current (A)
Fig 6. Typical On-Resistance Vs. Drain
Current
0.45
0.35
0.25
I _D = -3.4 A
0.15
0.05
2
A
5
8
11
14
-V _GS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
4
300
ID
TOP
-1.5A
250
-2.7A
BOTTOM -3.4A
200
150
100
50
0
25
50
75
100
125
150
Starting T_J , Junction Temperature ( ^°C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
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