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IRF7342TRPBF Datasheet, PDF (2/7 Pages) International Rectifier – Generation V Technology | |||
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IRF7342PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-55 âââ âââ V VGS = 0V, ID = -250µA
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ -0.054 âââ V/°C Reference to 25°C, ID = -1mA
RDS(on)
Static Drain-to-Source On-Resistance
âââ 0.095 0.105
âââ 0.150 0.170
â¦
VGS = -10V, ID = -3.4A Â
VGS = -4.5V, ID = -2.7A Â
VGS(th)
Gate Threshold Voltage
-1.0 âââ âââ V VDS = VGS, ID = -250µA
gfs
Forward Transconductance
3.3 âââ âââ S VDS = -10V, ID = -3.1A
IDSS
Drain-to-Source Leakage Current
âââ âââ -2.0
âââ âââ -25
µA
VDS = -55V, VGS = 0V
VDS = -55V, VGS = 0V, TJ = 55°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ -100 nA VGS = -20V
âââ âââ 100
VGS = 20V
Qg
Total Gate Charge
âââ 26 38
ID = -3.1A
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
âââ 3.0 4.5
âââ 8.4 13
nC VDS = -44V
VGS = -10V, See Fig. 10 Â
td(on)
Turn-On Delay Time
âââ 14 22
VDD = -28V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
âââ 10 15
âââ 43 64
âââ 22 32
ns ID = -1.0A
RG = 6.0â¦
RD = 16â¦, Â
Ciss
Input Capacitance
âââ 690 âââ
VGS = 0V
Coss
Output Capacitance
âââ 210 âââ pF VDS = -25V
Crss
Reverse Transfer Capacitance
âââ 86 âââ
Æ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions
ÂÂÂ ÂÂÂ -2.0
ÂÂÂ ÂÂÂ -27
MOSFET symbol
showing the
A integral reverse
p-n junction diode.
D
G
S
âââ âââ -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V Â
âââ 54 80 ns TJ = 25°C, IF = -2.0A
âââ 85 130 nC di/dt = -100A/µs Â
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 Starting TJ = 25°C, L = 20mH
RG = 25â¦, IAS = -3.4A. (See Figure 8)
 ISD ⤠-3.4A, di/dt ⤠-150A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C
 Pulse width ⤠300µs; duty cycle ⤠2%.
Â
When mounted on 1 inch square copper board, t<10 sec
2
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