IRF7338PBF Datasheet, PDF (4/12 Pages) International Rectifier – HEXFET Power MOSFET

IRF7338PbF
N-Channel
2.0
I_D = 6.3A
1.5
1.0
0.5
V _GS = 4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature
( ^°C)
Fig 5. Normalized On-Resistance
Vs. Temperature
0.12
0.10
0.08
VGS = 3.0V
0.06
0.04
VGS = 4.5V
0.02
0.00
0
5 10 15 20 25 30
ID , Drain Current (A)
Fig 6. Typical On-Resistance Vs. Drain
Current
0.05
80
60
0.04
40
0.03
ID = 6.3A
20
0.02
3.0
4.0
5.0
6.0
7.0
8.0
VGS, Gate -to -Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
4
0
0.00 0.00 0.00 0.01 0.10 1.00 10.00
Time (sec)
Fig 8. Typical Power Vs. Time
www.irf.com