IRF7338PBF Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET Power MOSFET

PD - 95197
IRF7338PbF
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
S1
l Surface Mount
G1
l Available in Tape & Reel
S2
l Lead-Free
G2
Description
These N and P channel MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
the extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
HEXFET^® Power MOSFET
N-CHANNEL MOSFET
1
8
2
7
3
6
4
5
P-CHANNEL MOSFET
Top View
N-Ch P-Ch
D1
D1
V_DSS 12V
D2
-12V
D2
R_DS(on) 0.034Ω 0.150Ω
This Dual SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
SO-8
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
T_J, T_STG
Parameter
Drain-to-Source Voltage
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
R_θJL
R_θJA
www.irf.com
Parameter
Junction-to-Drain Lead
Junction-to-Ambient ƒ
Max.
N-Channel
P-Channel
12
6.3
5.2
26
2.0
1.3
16
±12 „
-55 to + 150
-12
-3.0
-2.5
-13
± 8.0
Units
A
W
mW/°C
V
°C
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
1
9/30/04