IRF7210PBF Datasheet, PDF (4/7 Pages) International Rectifier – HEXFET Power MOSFET

IRF7210PbF
24000
20000
16000
V_GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
Ciss
12000
8000
0
C_oss
C_rss
2
4
6
8
10
-V_DS , Drain-to-Source Voltage (V)
A
12
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
I _D = -10A
8
V_DS = -12V
6
4
2
0
A
0
50
100
150
200
250
300
Q _G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
10
T_J = 25°C
T_J = 150°C
1
VGS = 0V _A
0.0
2.0
4.0
6.0
8.0
10.0
-V _SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
100us
1ms
10
10ms
T_A = 25°C
T_J = 150°C
Single Pulse
1
0.1
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area.
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