IRF7210PBF Datasheet, PDF (3/7 Pages) International Rectifier – HEXFET Power MOSFET

20
VGS
TOP
-1.8V
-1.6V
-1.4V
-1.2V
16
-1.0V
BOTTOM -0.8V
12
300µs PULSE WIDTH
TJ = 25°C
8
4
-0.8V
0
A
0
2
4
6
8
10
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
IRF7210PbF
16
VGS
TOP
-1.8V
-1.6V
-1.4V
-1.2V
-1.0V
BOTTOM -0.8V
12
300µs PULSE WIDTH
TJ = 150°C
8
4
-0.8V
0
A
0
2
4
6
8
10
-V _DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
140
120
TJ = 25°C
100
80
60
T_J = 150°C
40
20
0
0.0
V DS= -10V
300µs PULSE WIDTH
A
2.0
4.0
6.0
8.0
-V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0 _{ID = -16A}
1.5
1.0
0.5
V_GS = -4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3