IRF6614PBF Datasheet, PDF (4/10 Pages) International Rectifier – DirectFET

Power MOSFET

IRF6614PbF
1000
100
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.3V
1
0.1
0.01
0.1
2.3V
≤ 60µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
100.0
TJ = 150°C
TJ = 25°C
10.0
TJ = -40°C
1000
100
TOP
BOTTOM
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.3V
10
1
0.1
2.3V
≤ 60µs PULSE WIDTH
Tj = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Output Characteristics
2.0
ID = 12.7A
VGS = 10V
1.5
1.0
0.1
1.5
VDS = 15V
≤ 60µs PULSE WIDTH
2.0
2.5
3.0
3.5
4.0
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
4000
3000
2000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
0
1
Coss
Crss
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 7. Normalized On-Resistance vs. Temperature
30
TA= 25°C
25
20
15
VGS = 3.0V
VGS = 3.5V
VGS = 4.0V
VGS = 4.5V
VGS = 5.0V
VGS = 10V
10
5
0
20
40
60
80
ID, Drain Current (A)
Fig 9. Typical On-Resistance Vs.
Drain Current and Gate Voltage
www.irf.com