IRF6614PBF Datasheet, PDF (3/10 Pages) International Rectifier – DirectFET

Power MOSFET

IRF6614PbF
Absolute Maximum Ratings
P_D @T_A = 25°C
P_D @T_A = 70°C
P_D @T_C = 25°C
e Power Dissipation
e Power Dissipation
f Power Dissipation
Parameter
T_P
Peak Soldering Temperature
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
Parameter
R_θJA
el Junction-to-Ambient
R_θJA
jl Junction-to-Ambient
R_θJA
kl Junction-to-Ambient
R_θJC
fl Junction-to-Case
R_θJ-PCB
Junction-to-PCB Mounted
eà Linear Derating Factor
100
Max.
2.1
1.4
42
270
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
0.017
Max.
58
–––
–––
3.0
–––
Units
W
°C
Units
°C/W
W/°C
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
R_1R1
R_2R2
R_3R3
R_4R4
R_5R5
Ri (°C/W) τi (sec)
τ_{J τJ}
τ_{Cτ 0.6676 0.000066}
τ_{1 τ1}
τ_{2 τ2}
τ_{3 τ3}
τ_{4 τ4}
τ_{5 τ5}
1.0462 0.000896
Ci= τi/Ri
1.5611 0.004386
Ci= τi/Ri
29.282 0.68618
25.455 32
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
10
100
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
ƒ Surface mounted on 1 in. square Cu board, steady state.
‰ Mounted on minimum footprint full size board with metalized
„ T_C measured with thermocouple incontact with top (Drain) of part. ^{back and with small clip heatsink.}
ˆ Used double sided cooling, mounting pad with large heatsink.
Š R_θ is measured at T_J of approximately 90°C.
ƒ Surface mounted on 1 in. square Cu
board (still air).
www.irf.com
‰ Mounted to a PCB with
small clip heatsink (still air)
‰ Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3