IRF6217 Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET(Reset Switch for Active Clamp Reset DC to DC converters)

IRF6217
10000
1000
100
10
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
1
1
10
100
1000
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
 12
I_{D =} -0.42A
10
 ^{VDS = -120V}
V_DS = -75V
V_DS = -30V
8
6
4
2
0
0
2
4
6
8
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
 T_J = 150 ^° C
1
 T_J = 25 ^° C
0.1
0.2
 V GS= 0 V
0.6
0.9
1.3
1.6
-V _SD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
1
100µsec
1msec
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
1
10
10msec
100
1000
-VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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