IRF6217 Datasheet, PDF(2/8 Page) International Rectifier – HEXFET Power MOSFET(Reset Switch for Active Clamp Reset DC to DC converters)

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IRF6217 Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET(Reset Switch for Active Clamp Reset DC to DC converters)

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IRF6217

Static @ TJ = 25Â°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)

Gate Threshold Voltage

IDSS

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

IGSS

Gate-to-Source Reverse Leakage

-150

âââ

-3.0

âââ

âââ âââ V

-0.17 âââ V/Â°C

âââ 2.4 â¦

âââ -5.0 V

âââ -25 ÂµA

âââ -250

âââ -100

âââ 100

VGS = 0V, ID = -250ÂµA

Reference to 25Â°C, ID = -1mA Â

VGS = -10V, ID = -0.42A Â

VDS = VGS, ID = -250ÂµA

VDS = -150V, VGS = 0V, TJ = 25Â°C

VDS = -120V, VGS = 0V, TJ = 125Â°C

VGS = -20V

VGS = 20V

Dynamic @ TJ = 25Â°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

gfs

Forward Transconductance

0.55 âââ âââ S VDS = -50V, ID = -0.42A

Total Gate Charge

Qgs

Gate-to-Source Charge

âââ 6.0 9.0

âââ 1.6 2.4

ID = -0.42A

nC VDS = -120V

Qgd

td(on)

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

âââ 2.8 4.2

âââ 12 âââ

VGS = -10V,

VDD = -75V

td(off)

Ciss

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

âââ 7.2 âââ ns ID = -0.42A

âââ 14 âââ

RG = 6.2â¦

âââ 16 âââ

VGS = -10V Â

âââ 150 âââ

VGS = 0V

Coss

Crss

Output Capacitance

Reverse Transfer Capacitance

âââ 30 âââ

VDS = -25V

âââ 10 âââ pF Æ = 1.0KHz

Coss

Output Capacitance

âââ 150 âââ

âââ 15 âââ

VGS = 0V, VDS = -1.0V, Æ = 1.0KHz

VGS = 0V, VDS = -120V, Æ = 1.0KHz

Coss eff. Effective Output Capacitance

âââ 45 âââ

VGS = 0V, VDS = 0V to -120V

Avalanche Characteristics

Parameter

EAS

Single Pulse Avalanche EnergyÂ

IAR

Avalanche CurrentÂ

Typ.

âââ

Max.

-1.4

Units

Diode Characteristics

Parameter

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) Â

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

Min.

âââ

Typ.

âââ

Max.

-1.8

-5.0

-1.6

130

Units

Conditions

MOSFET symbol

showing the

integral reverse

p-n junction diode.

TJ = 25Â°C, IS = -0.42A, VGS = 0V Â

TJ = 25Â°C, IF = -0.42A

di/dt = -100A/Âµs Â

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