IRF5Y31N20 Datasheet, PDF (4/7 Pages) International Rectifier – POWER MOSFET N-CHANNEL(Vdss=200V, Rds(on)=0.092ohm, Id=18A*)

IRF5Y31N20
4000
3000
 VGS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
 C_iss
2000
1000
0
1
C _oss
C _rss
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ ID = 18A}
16
 ^{VDS = 160V}
V_DS = 100V
V_DS = 40V
12
8
4
 FOR TEST CIRCUIT
SEE FIGURE 13
0
0
20
40
60
80
100
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
2.0
VSD , Source-to-Drain Voltage ( V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
100µs
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
10ms
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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