IRF4905STRLPBF Datasheet, PDF (4/12 Pages) International Rectifier – HEXFET® Power MOSFET

IRF4905S/L
7000
6000
5000
4000
3000
2000
1000
0
1
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID= -42A
16
VDS= -44V
VDS= -28V
VDS= -11V
12
8
4
0
0
40
80
120 160 200
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
100.0
TJ = 150°C
10.0
TJ = 25°C
1.0
0.1
0.0
VGS = 0V
0.4
0.8
1.2
1.6
2.0
-VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100
100µsec
1msec
10msec
10
LIMITED BY PACKAGE
DC
Tc = 25°C
Tj = 150°C
Single Pulse
1
0
1
10
100
-VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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