IRF4905STRLPBF Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET® Power MOSFET

PD - 97034
IRF4905SPbF
IRF4905LPbF
Features
O Advanced Process Technology
O Ultra Low On-Resistance
O 150°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
O Some Parameters Are Differrent from
IRF4905S
O Lead-Free
Description
Features of this design are a 150°C junction oper-
ating temperature, fast switching speed and im-
proved repetitive avalanche rating . These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of other
applications.
G
D
HEXFET^® Power MOSFET
D
V_DSS = -55V
R_DS(on) = 20mΩ
I_D = -42A
S
D
S
D
G
D²Pak
IRF4905SPbF
S
D
G
TO-262
IRF4905LPbF
Absolute Maximum Ratings
G
Gate
Parameter
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V (Package Limited)
I_DM
™ Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
d E_{AS (Thermally limited)} Single Pulse Avalanche Energy
E_AS (Tested )
h Single Pulse Avalanche Energy Tested Value
I_AR
Ù Avalanche Current
E_AR
g Repetitive Avalanche Energy
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
i Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
j Junction-to-Case
R_θJA
ij Junction-to-Ambient (PCB Mount, steady state)
www.irf.com
D
Drain
S
Source
Max.
-70
-44
-42
-280
170
1.3
± 20
140
790
See Fig.12a, 12b, 15, 16
-55 to + 150
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
Max.
0.75
40
Units
1
8/5/05