IRF3704ZCSPBF Datasheet, PDF (4/11 Pages) International Rectifier – HEXFET Power MOSFET

IRF3704ZCS/LPbF
10000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
Ciss
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
12
ID= 17A
10
VDS= 16V
VDS= 10V
8
6
4
2
0
0
5
10
15
20
25
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
100.0
TJ = 175°C
10.0
1.0
TJ = 25°C
0.1
0.0
VGS = 0V
0.5
1.0
1.5
2.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
1msec
10msec
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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