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IRF3704ZCSPBF Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET Power MOSFET
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l Lead-Free
Benefits
l Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
PD - 95107
IRF3704ZCSPbF
IRF3704ZCLPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
20V 7.9m: 8.7nC
D2Pak
TO-262
IRF3704ZCSPbF IRF3704ZCLPbF
Absolute Maximum Ratings
Parameter
VDS
Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
c Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJA
f Junction-to-Ambient (PCB Mount)
Max.
20
± 20
67 g
47 g
260
57
28
0.38
-55 to + 175
300 (1.6mm from case)
Typ.
–––
–––
Max.
2.65
40
Units
V
A
W
W/°C
°C
Units
°C/W
Notes  through … are on page 11
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1
03/11/04