IRF3205STRR Datasheet, PDF (4/11 Pages) International Rectifier – Advanced Process Technology

IRF3205S/IRF3205L
6000
5000
4000
3000
2000
1000
0
1
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
100
VDS, Drain-to-Source Voltage (V)
16 _{ID = 62A}
14
12
V _DS= 44V
V _DS= 27V
V _DS= 11V
10
8
6
4
2
0
0
20
40
60
80 100 120
Q_G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
T_J = 175^° C
100
10
T_J = 25° C
1
0.1
0.2
V _GS = 0 V
0.8
1.4
2.0
2.6
V_SD ,Source-to-Drain Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10000
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
100
100us
1ms
10
T_C = 25 °C
T_J = 175 °C
Single Pulse
1
1
10
10ms
100
V_DS , Drain-to-Source Voltage (V)
1000
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 8. Maximum Safe Operating Area
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