IRF3205STRR Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Process Technology

l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Advanced HEXFET^® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D²Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest power
capability and the lowest possible on-resistance in any existing surface
mount package. The D²Pak is suitable for high current applications
because of its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF3205L) is available for low-profile
applications.
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
R_θJC
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mounted, steady-state)*
www.irf.com
PD - 94149A
IRF3205S
IRF3205L
HEXFET^® Power MOSFET
D
V_DSS = 55V
R_DS(on) = 8.0mΩ
I_D = 110A^Â
S
D²Pak
IRF3205S
TO-262
IRF3205L
Max.
110 …
80
390
200
1.3
± 20
62
20
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
0.75
40
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Units
°C/W
1
09/06/02