IRF2907ZS-7PPBF Datasheet, PDF (4/10 Pages) International Rectifier – HEXFET® Power MOSFET

IRF2907ZS-7PPbF
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
12.0
10.0
8.0
ID= 110A
VDS= 60V
VDS= 38V
VDS= 15V
6.0
4.0
2.0
0.0
0
50
100
150
200
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
100
TJ = 175°C
10
TJ = 25°C
1
0.1
0.0
VGS = 0V
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
10000
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
1msec
10
10msec
1 _{Tc = 25°C}
Tj = 175°C
Single Pulse
0.1
0
1
DC
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 8. Maximum Safe Operating Area
www.irf.com