IRF2907ZS-7PPBF Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET® Power MOSFET

PD - 97031
IRF2907ZS-7PPbF
Features
l Advanced Process Technology
HEXFET^® Power MOSFET
l Ultra Low On-Resistance
l 175°C Operating Temperature
D
V_DSS = 75V
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
R_DS(on) = 3.8mΩ^‰
Description
Specifically designed for high current, high reliabil-
ity applications, this HEXFET^® Power MOSFET
utilizes the latest processing techniques and ad-
vanced packaging technology to achieve extremely
low on-resistance and world -class current ratings.
Additional features of this design are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Server &
Telecom OR'ing, Automotive and low voltage Motor
Drive Applications.
S
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
I_D = 160A
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (See Fig. 9)
Continuous Drain Current, V_GS @ 10V (Package Limited)
c Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V_GS
E_AS
E_AS (tested)
I_AR
E_AR
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
h Single Pulse Avalanche Energy Tested Value
c Avalanche Current
g Repetitive Avalanche Energy
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
R_θJC
R_θCS
R_θJA
R_θJA
Parameter
j Junction-to-Case
Case-to-Sink, Flat, Greased Surface
j Junction-to-Ambient
ij Junction-to-Ambient (PCB Mount, steady state)
HEXFET^® is a registered trademark of International Rectifier.
www.irf.com
Max.
180
120
160
700
300
2.0
± 20
160
410
See Fig.12a,12b,15,16
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
08/03/05