IRF2903Z Datasheet, PDF (4/12 Pages) International Rectifier – HEXFET Power MOSFET

IRF2903Z/S/L
12000
10000
8000
6000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
4000
2000
0
1
Coss
Crss
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID= 75A
16
VDS= 24V
VDS= 15V
12
8
4
0
0
40 80 120 160 200 240
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
100.0
TJ = 175°C
10.0
TJ = 25°C
1.0
0.1
0.0
VGS = 0V
0.4 0.8 1.2 1.6 2.0 2.4
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10000
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
1msec
100µsec
10 ^{LIMITED BY PACKAGE}
10msec
1 _{Tc = 25°C}
Tj = 175°C
Single Pulse
0.1
0.1
1.0
DC
10.0
100.0
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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