IRF2903Z Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET Power MOSFET

PD - 96988A
AUTOMOTIVE MOSFET
IRF2903Z
IRF2903ZS
IRF2903ZL
Features
HEXFET^® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
D
V_DSS = 30V
l 175°C Operating Temperature
l Fast Switching
G
R_DS(on) = 2.4mΩ
l Repetitive Avalanche Allowed up to Tjmax
Description
S
I_D = 75A
Specifically designed for Automotive applications, _D
this HEXFET^® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
S
this design are a 175°C junction operating tempera-
D
ture, fast switching speed and improved repetitive
G
avalanche rating . These features combine to make TO-220AB
this design an extremely efficient and reliable device ^IRF2903Z
for use in Automotive applications and a wide variety
of other applications.
Absolute Maximum Ratings
G
Gate
D
D
S
D
G
D²Pak
IRF2903ZS
D
Drain
S
D
G
TO-262
IRF2903ZL
S
Source
Parameter
Max.
Units
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V (Package Limited)
I_DM
™ Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
260
180
75
1020
290
2.0
A
W
W/°C
V_GS
Gate-to-Source Voltage
d E_{AS (Thermally limited)} Single Pulse Avalanche Energy
E_AS (Tested )
h Single Pulse Avalanche Energy Tested Value
I_AR
Ù Avalanche Current
E_AR
g Repetitive Avalanche Energy
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
i Mounting Torque, 6-32 or M3 screw
± 20
V
290
mJ
820
See Fig.12a, 12b, 15, 16
A
mJ
-55 to + 175
°C
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Thermal Resistance
Parameter
Typ.
R_θJC
k Junction-to-Case
–––
R_θCS
i Case-to-Sink, Flat, Greased Surface
0.50
R_θJA
ik Junction-to-Ambient
–––
R_θJA
jk Junction-to-Ambient (PCB Mount, steady state)
–––
Max.
0.51
–––
62
40
Units
°C/W
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1
8/26/05