GA100TS60SQ Datasheet, PDF (4/7 Pages) International Rectifier – HALF-BRIDGE IGBT INT-A-PAK Standard Speed IGBT

GA100TS60SQ
Bulletin I27119 rev. B 06/02
20
Vcc = 400V
Ic = 100A
15
10
5
0
0 100 200 300 400 500 600 700
Q_G, Total Gate Charge (nC)
Fig. 5 - Typical Gate Charge vs. Gate-to-
Emitter Voltage
35
Tj = 25˚C, Vce = 480V
30 ^{Vge = 15V, Ic = 100A}
25
Eoff
20
15
Eon
10
5
0
10
20
30
40
50
R_G, Gate Reistance (Ω)
Fig. 6 - Typical Switching Losses vs Gate
Resistance
60
Tj = 125˚C
Vce = 480V
50 _{Vge = 15V}
Eoff
Rge = 15 Ω
40
30
20
10
Eon
0
0
40
80
120 160
I_C, Collector-to-Emitter Current (A)
Fig. 7 - Typical Switching Losses vs Collector-to-Emitter Current
4
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