GA100TS60SQ Datasheet, PDF (3/7 Pages) International Rectifier – HALF-BRIDGE IGBT INT-A-PAK Standard Speed IGBT

GA100TS60SQ
Bulletin I27119 rev. B 06/02
1000
Vge = 15V
100
Tj = 25˚C
Tj = 125˚C
10
0.6 0.8 1 1.2 1.4 1.6 1.8
V_CE, Collector-to-Emitter Voltage (V)
Fig. 1 - Typical Output Characteristics
1000
T _J = 125˚C
100
TJ = 25˚C
10
Vce = 10V
380µs PULSE WIDTH
1
5.5
6.5
7.5
8.5
V_GE, Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Transfer Characteristics
240
200
160
120
80
40
0
25 50 75 100 125 150
T_C, Case Temperature (°C)
Fig. 3 - Maximum Collector Current
vs. Case Temperature
1.5
I _C = 200A
1.3
1.1
I _C= 100A
I = 50A
0.9
0.7
25
50 75 100 125 150
T_J, Junction Temperature (°C)
Fig. 4 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
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