AUIRF3004WL Datasheet, PDF (4/10 Pages) International Rectifier – HEXFETPower MOSFET

AUIRF3004WL
10000
1000
100
TJ = 175°C
TJ = 25°C
10
VGS = 0V
1.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
400
Limited By Package
300
200
100
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-5 0 5 10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical C_OSS Stored Energy
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100
Limited by package
10
100μsec
1msec
1 _{Tc = 25°C}
Tj = 175°C
Single Pulse
10msec
DC
0.1
0.1
1
10
100
VDS, Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
56
Id = 5mA
54
52
50
48
46
44
42
40
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
2000
1800
1600
1400
ID
TOP 45A
86A
BOTTOM 232A
1200
1000
800
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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