AUIRF3004WL Datasheet, PDF (1/10 Pages) International Rectifier – HEXFETPower MOSFET

AUTOMOTIVE GRADE
PD - 97677
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 50% Lower Lead Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
AUIRF3004WL
HEXFET^® Power MOSFET
D
V_(BR)DSS
40V
R_DS(on) typ.
1.27mΩ
max.
1.40mΩ
G
I_{D (Silicon Limited)}
386A c
S
I_{D (Package Limited)}
240A
Description
Specifically design for automotive applications this Widelead TO-
262 package part has the advantage of having over 50% lower
lead resistance and delivering over 20% lower Rds(on) when
compared with a traditional TO-262 package housing the same
silicon die. This greatly helps in reducing condition losses, achieving
higher current levels or enabling a system to run cooler and have
improved efficiency. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make this
design an extremely efficient and reliable device for use in
Automotive and other applications.
G
Gate
S
D
G
TO-262 WideLead
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those
indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended
periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
d ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
Maximum Power Dissipation
Max.
™ 386
™ 273
240
1544
375
Units
A
W
Linear Derating Factor
2.5
W/°C
V_GS
E_{AS (Thermally limited)}
I_AR
E_AR
dv/dt
e ^{Gate-to-Source Voltage}
Single Pulse Avalanche Energy
Ãd Avalanche Current
d Repetitive Avalanche Energy
f Peak Diode Recovery
± 20
470
See Fig. 14, 15, 22a, 22b,
6.1
V
mJ
A
mJ
V/ns
T_J
T_STG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Thermal Resistance
Parameter
R_θJC
j Junction-to-Case
Typ.
–––
Max.
0.40
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
05/13/11