JANSR2N7468U2 Datasheet, PDF (3/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

Radiation Characteristics
IRHNA57064, JANSR2N7468U2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 500K Rads(Si)¹ 1000K Rads (Si)² Units
Min Max Min Max
Test Conditions
BV_DSS Drain-to-Source Breakdown Voltage 60
—
60 —
V
V_GS = 0V, I_D = 1.0mA
VGS(th) Gate Threshold Voltage
2.0 4.0 1.5 4.0
VGS = V_DS, I_D = 1.0mA
I_GSS
I_GSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
— 100
— -100
— 100 _nA
— -100
V_GS = 20V
V_GS = -20 V
I_DSS
Zero Gate Voltage Drain Current
—
10
—
25 µA
V_DS= 48V, V_GS = 0V
R_DS(on) Static Drain-to-Source Ã
— 0.0061 — 0.0071 Ω
VGS = 12V, I_D = 45A
On-State Resistance (TO-3)
R_DS(on) Static Drain-to-Source Ã
— 0.0056 — 0.0065 Ω
VGS = 12V, I_D = 45A
On-State Resistance (SMD-2)
V_SD
Diode Forward Voltage Ã
—
1.3 —
1.3 V
V_GS = 0V, IS = 45A
1. Part numbers IRHNA57064 (JANSR2N7468U2), IRHNA53064 (JANSF2N7468U2) and IRHNA54064 (JANSG2N7468U2)
2. Part number IRHNA58064 (JANSH2N7468U2)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
Energy
Range
(MeV/(mg/cm²))
(MeV)
(µm)
@VGS =
0V
@VGS =
-5V
38 ± 5%
300 ± 7.5%
38 ± 7.5%
60
60
61 ± 5%
330 ± 7.5%
31 ± 10%
46
46
84 ± 5%
350 ± 10%
28 ± 7.5%
35
30
VDS (V)
@VGS =
-10V
60
35
25
@VGS =
-15V
60
25
20
@VGS =
-20V
30
15
14
70
60
50
40
30
20
10
0
0
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
-5
-10
-15
-20
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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