IRLMS1902PBF Datasheet, PDF (3/8 Pages) International Rectifier – HEXFET® Power MOSFET

100
10
VGS
TOP 7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
BOTTOM 1.75V
IRLMS1902PbF
100
10
VGS
TOP 7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
BOTTOM 1.75V
1
0.1
0.1
1.75V
20µs PULSE WIDTH
TJ = 25 ^°C
1
10
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
1.75V
0.1
0.1
20µs PULSE WIDTH
TJ = 150 °C
1
10
V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
T_J = 25°C
10
T_J = 150° C
1
0.1
1.5
V _DS = 10V
20µs PULSE WIDTH
2.0 2.5 3.0 3.5 4.0 4.5 5.0
V_GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0 _{ID = 2.2A}
1.5
1.0
0.5
V_GS = 4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3