IRLMS1902PBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET® Power MOSFET

l Generation V Technology
l Micro6 Package Style
l Ultra Low R_DS(on)
l N-Channel MOSFET
l Lead-Free
Description
Fifth Generation HEXFET^® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET^® power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The Micro6™ package with its customized leadframe
produces a HEXFET^® power MOSFET with R_DS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R_DS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
PD - 95359
IRLMS1902PbF
HEXFET^® Power MOSFET
D
1
D
2
A
6
D
5
D
V_DSS = 20V
G
3
4
S
Top View
R_DS(on) = 0.10Ω
Micro6™
Absolute Maximum Ratings
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
V_GS
dv/dt
T_J, T_STG
Parameter
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
3.2
2.6
18
1.7
13
± 12
5.0
-55 to + 150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
R_θJA
Maximum Junction-to-Ambient „
www.irf.com
Min.
–––
Typ.
–––
Max
75
Units
°C/W
1
1/18/05