IRL3714Z Datasheet, PDF (3/12 Pages) International Rectifier – HEXFET Power MOSFET

1000
100
TOP
BOTTOM
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
IRL3714Z/ZS/ZL
1000
100
TOP
BOTTOM
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
10
1
0.1
3.0V _{30µs PULSE WIDTH}
Tj = 25°C
1
10
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
3.0V
1
0.1
30µs PULSE WIDTH
Tj = 175°C
1
10
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
TJ = 25°C
100
TJ = 175°C
10
VDS = 10V
30µs PULSE WIDTH
1.0
2 3 4 5 6 7 8 9 10
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0
ID = 36A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3