IRL3714Z Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET Power MOSFET

Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
PD - 94798
IRL3714Z
IRL3714ZS
IRL3714ZL
HEXFET^® Power MOSFET
V_DSS R_DS(on) max Qg
20V
16m: 4.8nC
Benefits
l Low R_DS(on) at 4.5V V_GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL3714Z
D²Pak
IRL3714ZS
TO-262
IRL3714ZL
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 100°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
™ ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R_θJC
R_θCS
R_θJA
R_θJA
Junction-to-Case
e Case-to-Sink, Flat Greased Surface
eà Junction-to-Ambient
h Junction-to-Ambient (PCB Mount)
Notes  through † are on page 12
www.irf.com
Max.
20
± 20
36g
25g
140
35
18
0.23
-55 to + 175
300 (1.6mm from case)
Typ.
–––
0.50
–––
–––
Max.
4.3
–––
62
40
Units
V
A
W
W/°C
°C
Units
°C/W
1
10/8/03