IRHN9230_15 Datasheet, PDF (3/4 Pages) International Rectifier – Simple Drive Requirements

IRHN9230 Device
Radiation Characteristics
Radiation Performance of P-Channel Rad
Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The
hardness assurance program at International Rectifier
uses two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test method
1019. International Rectifier has imposed a standard
gate voltage of -12 volts per note 6 and a VDSS bias
condition equal to 80% of the device rated voltage per
note 7. Pre- and post-radiation limits of the devices
irradiated to 1 x 10⁵ Rads (Si) are identical and are
presented in Table 1. The values in Table 1 will be met
for either of the two low dose rate test circuits that are
used.
Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 10⁵
Rads (Si), no change in limits are specified in DC
parameters.
High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 10¹² Rads
(Si)/Sec.
International Rectifier radiation hardened P-Channel
HEXFETs are considered to be neutron-tolerant, as
stated in MIL-PRF-19500 Group D. International
Rectifier P-Channel radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects environment the results are shown in Table 3.
Table 1. Low Dose Rate †‡
IRHN9230
Parameter
100K Rads (Si)
min. max.
BV_DSS
V_GS(th)
I_GSS
I_GSS
I_DSS
R_DS(on)1
V_SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage„
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source„
On-State Resistance One
Diode Forward Voltage„
-200
-2.0
—
—
—
—
—
—
-4.0
-100
100
-25
0.8
-5.0
Units
V
nA
µA
Ω
V
Test Conditions Š
V_GS = 0V, I_D = -1.0 mA
VGS = V_DS, I_D = -1.0 mA
V_GS = -20V
V_GS = 20V
V_DS = 0.8 x Max Rating, V_GS = 0V
VGS = -12V, I_D = -4.0A
TC = 25°C, IS = -6.5A,V_GS = 0V
Table 2. High Dose Rate ˆ
Parameter
VDSS Drain-to-Source Voltage
IPP
di/dt
L1
10¹¹ Rads (Si)/sec10¹² Rads (Si)/sec
Min. Typ Max. Min.Typ. Max. ^Units
Test Conditions
— — -160 — — -160 V Applied drain-to-source voltage
during gamma-dot
— -60 — — -60 — A Peak radiation induced photo-current
— -800 — — -160 — A/µsec Rate of rise of photo-current
27 — — 0.5 — — µH Circuit inductance required to limit di/dt
Table 3. Single Event Effects ‰
Parameter
BVDSS
Typ.
-200
Units
V
LET (Si)
Fluence Range
Ion _(MeV/mg/cm2_{) (ions/cm}2_{) (µm)}
Ni
28
1 x 10⁵
~41
V_DS Bias
(V)
-200
V_GS Bias
(V)
+5