IRHN9230_15 Datasheet, PDF (1/4 Pages) International Rectifier – Simple Drive Requirements

Provisional Data Sheet No. PD-9.1445
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET^® TRANSISTOR
IRHN9230
P-CHANNEL
RAD HARD
-200 Volt, 0.8Ω, RAD HARD HEXFET
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 10⁵ Rads (Si). Under identical pre- and post-radiation
test conditions, International Rectifier’s P-Channel RAD
HARD HEXFETs retain identical electrical specifications up
to 1 x 10⁵ Rads (Si) total dose. No compensation in gate
drive circuitry is required. In addition these devices are also
capable of surviving transient ionization pulses as high as
1 x 10¹² Rads (Si)/Sec, and return to normal operation within
a few microseconds. Single Event Effect (SEE) testing of
International Rectifier P-Channel RAD HARD HEXFETs has
demonstrated virtual immunity to SEE failure. Since the
P-Channel RAD HARD process utilizes International
Rectifier’s patented HEXFET technology, the user can expect
the highest quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control,very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high-energy pulse circuits in space and
weapons environments.
Product Summary
Part Number
BVDSS
IRHN9230
-200V
RDS(on)
0.8Ω
ID
-6.5A
Features:
n Radiation Hardened up to 1 x 10⁵ Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light-weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
Pulsed Drain Current _
Max. Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy_‚
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy _
dv/dt
Peak Diode Recovery dv/dtƒ
TJ
Operating Junction
TSTG
Storage Temperature Range
Package Mounting
Surface Temperature
Weight
Notes: See page 4
IRHN9230
-6.5
-4.0
-26
75
0.6
±20
150
-6.5
7.5
-5.0
-55 to 150
300 (for 5 seconds)
Pre-Radiation
Units
A
W
W/K_Â
V
mJ
A
mJ
V/ns
o_C
2.6 (typical)
g