IRHLG7670Z4 Datasheet, PDF (3/16 Pages) International Rectifier – RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB)

Pre-Irradiation
IRHLG7670Z4, 2N7635M1
Electrical Characteristics For Each P-Channel Device @Tj = 25°C (Unless Otherwise specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage -60
∆BVDSS/∆TJ Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-1.0
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
—
gfs
Forward Transconductance
0.9
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Qgs
Qgd
td_(on)
tr
td_(off)
tf
LS + LD
Gate-to-Source Leakage Forward
—
Gate-to-Source Leakage Reverse
—
Total Gate Charge
—
Gate-to-Source Charge
—
Gate-to-Drain (‘Miller’) Charge
—
Turn-On Delay Time
—
Rise Time
—
Turn-Off Delay Time
—
Fall Time
—
Total Inductance
—
Ciss
Input Capacitance
—
Coss
Output Capacitance
—
Crss
Reverse Transfer Capacitance
—
Rg
Gate Resistance
—
Typ Max Units
Test Conditions
—— V
VGS = 0V, ID = -250µA
-0.08 — V/°C Reference to 25°C, ID = -1.0mA
— 1.25 Ω
VGS = -4.5V, ID = -0.45A _Ã
—
3.07
—
—
—
—
—
—
—
—
—
—
—
—
10
138
39
6.7
-2.0 V
— mV/°C
VDS = VGS, ID = -250µA
—S
-1.0
-10 µA
-100
100 ^nA
2.8
1.7 nC
0.8
VDS = -10V, IDS = -0.45A Ã
VDS= -48V ,VGS= 0V
VDS = -48V,
VGS = 0V, TJ =125°C
VGS = -10V
VGS = 10V
VGS = -4.5V, ID = -0.71A
VDS = -30V
17
20 ^ns
27
VDD = -30V, ID = -0.71A,
VGS = -5.0V, RG = 24Ω
23
—
Measured from Drain lead (6mm /0.25in
nH _{from pack.) to Source lead (6mm/0.25in}
from pack.)with Source wire internally
bonded from Source pin to Drain pad
—
— pF
VGS = 0V, VDS = -25V
f = 1.0MHz
—
52.4 — Ω
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) À
—
—
—
—
-0.71
-2.84
A
VSD Diode Forward Voltage
— — -5.0 V
Tj = 25°C, IS = -0.71A, VGS = 0V Ã
trr Reverse Recovery Time
— — 30 ns Tj = 25°C, IF = -0.71A, di/dt ≤ -100A/µs
QRR Reverse Recovery Charge
— — 11 nC
VDD ≤ -25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
— — 125 °C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
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