IRHLG7670Z4 Datasheet, PDF (12/16 Pages) International Rectifier – RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB)

IRHLG7670Z4, 2N7635M1
P-Channel
Q2,Q4
4.0
3.5
ID = -0.71A
3.0
2.5
2.0
TJ = 150°C
1.5
1.0
0.5
TJ = 25°C
0
2 3 4 5 6 7 8 9 10 11 12
-VGS, Gate -to -Source Voltage (V)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
Pre-Irradiation
TJ = 150°C
TJ = 25°C
Vgs = -4.5V
0.5 1.0 1.5 2.0 2.5 3.0
-ID, Drain Current (A)
Fig 23. Typical On-Resistance Vs
Gate Voltage
Fig 24. Typical On-Resistance Vs
Drain Current
75
ID = -1.0mA
70
65
60
55
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 25. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
12
3.0
2.5
2.0
1.5
1.0 ^{ID = -50µA}
ID = -250µA
0.5 ^{ID = -1.0mA}
ID = -150mA
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 26. Typical Threshold Voltage Vs
Temperature
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