IRHF597110 Datasheet, PDF (3/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

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IRHF597110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
100K Rads(Si)¹ 300K Rads (Si)² Units
Min Max
Min Max
Test Conditions
BV_DSS Drain-to-Source Breakdown Voltage -100
—
VGS(th) Gate Threshold Voltage
-2.0 -4.0
-100 —
-2.0 -5.0
V
V_GS = 0V, I_D = -1.0mA
VGS = V_DS, I_D = -1.0mA
I_GSS
I_GSS
Gate-to-Source Leakage Forward
— -100
— -100 _nA
Gate-to-Source Leakage Reverse —
100
— 100
V_GS = -20V
V_GS = 20 V
I_DSS
Zero Gate Voltage Drain Current
R_DS(on) Static Drain-to-Source ➃
—
-10
— -10 µA
— 0.916 — 0.916 Ω
V_DS= -80V, V_GS =0V
VGS = -12V, I_D =-1.6A
On-State Resistance (TO-39)
V_SD
Diode Forward Voltage ➃
—
-5.0 —
-5.0 V
V_GS = 0V, IS = -2.6A
1. Part number IRHF597110
2. Part number IRHF593110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
MeV/(mg/cm²)
Cu
28.0
Br
36.8
I
59.8
Energy
(MeV)
285
305
343
Range
(µm) @V_GS=0V
43.0 -100
39.0
-100
32.6
-60
@V_GS=5V
-100
-100
—
V_DS (V)
@ V_GS=10V
-100
-70
—
@V_GS=15V
-70
- 50
—
@V_GS=20V
-60
-40
—
-120
-100
-80
-60
-40
-20
0
0
Cu
Br
I
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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